Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates ammonia during MOCVD growth, best growth conditions InGaN layers for green laser diodes explored. Different emission peak observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes appearance composite structures quantum-dot-like centers. It was shown that these are caused several effects induced ammonia, including both promotion indium corporation corrosion from hydrogen decomposition as well decrease energy dot-like We carried out detailed research to determine ammonia’s mechanism action layer growth.